kw.\*:("Aluminium Antimonides")
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2Eg transitions in GaSb-AlSb quantum-well structuresFORCHEL, A; CEBULLA, U; TRÄNKLE, G et al.Physical review letters. 1986, Vol 57, Num 25, pp 3217-3220, issn 0031-9007Article
Nonparabolic behavior of GaSb-AlSb quantum wells under hydrostatic pressureLEFEBVRE, P; GIL, B; ALLEGRE, J et al.Physical review. B, Condensed matter. 1987, Vol 35, Num 3, pp 1230-1235, issn 0163-1829Article
Light and heavy valence subband reversal in GaSb-AlSb superlatticesVOISIN, P; DELALANDE, C; VOOS, M et al.Physical review. B, Condensed matter. 1984, Vol 30, Num 4, pp 2276-2278, issn 0163-1829Article
Raman resonance on E1 edges in superlatticesTEJEDOR, C; CALLEJA, J. M; MESEGUER, F et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 8, pp 5303-5311, issn 0163-1829Article
GaSb/AlSb multiquantum well structures: molecular beam epitaxial growth and narrow-well photoluminescenceGRIFFITHS, G; MOHOMMED, K; SUBBANA, S et al.Applied physics letters. 1983, Vol 43, Num 11, pp 1059-1061, issn 0003-6951Article
Optical investigations of a GaSb-AlSb single quantum wellRAISIN, C; LASSABATERE, L; ALLIBERT, C et al.Solid state communications. 1987, Vol 61, Num 1, pp 17-19, issn 0038-1098Article
Free-exciton luminescence in GaSb quantum wells confined by short-period AlSb-GaSb superlatticesPLOOG, K; OHMORI, Y; OKAMOTO, H et al.Applied physics letters. 1985, Vol 47, Num 4, pp 384-386, issn 0003-6951Article
Electron transport in indium doped AlSb filmsSINGH, T; BEDI, R. K.SPIE proceedings series. 1998, pp 365-368, isbn 0-8194-2756-X, 2VolConference Paper
Raman scattering in GaSb-AlSb strained layer superlaticesJUSSERAND, B; VOISIN, P; VOOS, M et al.Applied physics letters. 1985, Vol 46, Num 7, pp 678-680, issn 0003-6951Article
Anti-crossing behavior of local vibrational modes in AlSbMCCLUSKEY, M. D; HALLER, E. E; WALUKIEWICZ, W et al.Solid state communications. 1998, Vol 106, Num 9, pp 587-590, issn 0038-1098Article
Calcul des paramètres d'interaction dans les systèmes quasibinaires à base de germanium et de siliciumKORENCHUK, N. M; PRACH, P. I; TISHCHENKO, I. A et al.Žurnal fizičeskoj himii. 1989, Vol 63, Num 4, pp 1107-1109, issn 0044-4537Article
Strain accommodation in GaSb/AlSb superlattices on (001) GaSb substrates with AlSb buffersVILLAFLOR, A. B; YOSHIZAWA, M; KIMATA, M et al.Japanese journal of applied physics. 1989, Vol 28, Num 2, pp L166-L168, issn 0021-4922, part 2Article
Thermodynamic optimization in CVD processes involving candidate materials for photovoltaic solar energy conversion and for space applicationBERNARD, C.High Temperatures. High Pressures (Print). 1982, Vol 14, Num 4, pp 377-381, issn 0018-1544Article
Raman scattering study of longitudinal acoustic and optic phonons in InSb/In1-xAlxSb strained-layer superlatticesGNEZDILOV, V. P; LOCKWOOD, D. J; WEBB, J. B et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 617-620, issn 0038-1101Conference Paper
Γ-X intervalley tunneling in InAs/AlSb resonant tunneling diodesCARNAHAN, R. E; MALDONADO, M. A; MARTIN, K. P et al.Applied physics letters. 1993, Vol 62, Num 12, pp 1385-1387, issn 0003-6951Article
High quantum efficiency InAs/GaInSb/AlSb interband cascade lasersYANG, B. H; YANG, R. Q; ZHANG, D et al.SPIE proceedings series. 1998, pp 324-332, isbn 0-8194-3008-0Conference Paper
New GaSb/AlSb/GaSb/AlSb/InAs/AlSb/InAs triple-barrier interband tunnelling diodeYANG, L; CHEN, J. F; CHO, A. Y et al.Electronics Letters. 1990, Vol 26, Num 16, pp 1277-1279, issn 0013-5194Article
Temperature dependence of long-wavelength opical phonons in AlSbRAPTIS, Y. S; ANASTASSAKIS, E.Solid state communications. 1990, Vol 76, Num 3, pp 335-338, issn 0038-1098, 4 p.Article
Piezo-Raman studies of phonons in AlSbANASTASSAKIS, E; CARDONA, M.Solid state communications. 1987, Vol 63, Num 10, pp 893-897, issn 0038-1098Article
A Rutherford backscattering spectroscopic study of the aluminium antimonide oxidation process in airSHIBATA, T; NAKATA, J; NANISHI, Y et al.Japanese journal of applied physics. 1994, Vol 33, Num 4A, pp 1767-1772, issn 0021-4922, 1Article
Type-II M structure photodiodes : An alternative material design for mid-wave to long wavelength infrared regimesNGUYEN, B.-M; RAZEGHI, M; NATHAN, V et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 64790S.1-64790S.10, issn 0277-786X, isbn 978-0-8194-6592-4, 1VolConference Paper
SYNTHESES COMPAREES D'ALSB PAR RECUIT LASER ET DECHARGE CAPACITIVE = COMPOUND SYNTHESIS OF ALSB BY LASER AND CAPACITY DISCHARGE ANNEALINGBAUFAY L; ANDREW R; PIGEOLET A et al.1983; REVUE DE PHYSIQUE APPLIQUEE; ISSN 0035-1687; FRA; DA. 1983; VOL. 18; NO 4; PP. 207-212; ABS. ENG; BIBL. 11 REF.Article
The effect of hydrostatic pressure on the operation of quantum cascade lasersADAMS, Alfred R; MARKO, Igor P; SWEENEY, Stephen J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7222, issn 0277-786X, isbn 978-0-8194-7468-1 0-8194-7468-1, 1Vol, 722203.1-722203.6Conference Paper
Evaluation of interfaces in narrow InAs/AlSb quantum wellsTANG, J; LARRABEE, D. C; KOLOKOLOV, K. I et al.IEEE Lester Eastman conference on high performance devices. 2002, pp 223-227, isbn 0-7803-7478-9, 5 p.Conference Paper
Diamagnetic and dielectic susceptibilities of AlSb and GaSbSAHU, T; NAYAK, S. K; ACHARYA, R. N et al.Physica status solidi. B. Basic research. 1993, Vol 178, Num 2, pp 343-351, issn 0370-1972Article